http://dspace.bsuedu.ru/handle/123456789/65383| Title: | On anomalous diffusion of fast electrons through the silicon crystal |
| Authors: | Syshchenko, V.V. Tarnovsky, A.I. Dronik, V.I. |
| Keywords: | physics solid state physics channeling silicon numerical simulation anomalous diffusion fast electrons |
| Issue Date: | 2024 |
| Citation: | Syshchenko V.V. On anomalous diffusion of fast electrons through the silicon crystal / V.V. Syshchenko, A.I. Tarnovsky, V.I. Dronik // Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. - 2024. - Vol.18, №5.-P. 1094-1099. - Doi: 10.1134/S1027451024700873. - Refer.: p. 1098-1099. |
| Abstract: | In this work, the anomalous diffusion exponent has been found by numerical simulation for different values of the energy of electron transverse motion in the (100) plane of a silicon crystal |
| URI: | http://dspace.bsuedu.ru/handle/123456789/65383 |
| Appears in Collections: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages) |
| File | Description | Size | Format | |
|---|---|---|---|---|
| Syshchenko_On anomalous_24.pdf | 733.72 kB | Adobe PDF | View/Open |
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