| Поле DC | Значение | Язык |
|---|
| dc.contributor.author | Mordkovlch, V. N. | - |
| dc.contributor.author | Batabanellkov, M. Y. | - |
| dc.date.accessioned | 2022-05-24T11:31:33Z | - |
| dc.date.available | 2022-05-24T11:31:33Z | - |
| dc.date.issued | 1997 | - |
| dc.identifier.citation | Mordkovlch, V.N. Photon assisted particle irradiation of silicon / V.N. Mordkovlch, M.Y. Batabanellkov ; Institute of microelectronics technology and high purity materials, Russian academy of sciences // Научные ведомости Белгородского государственного университета. - 1997. - № 2 (5). - С. 191-195. | ru |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/46962 | - |
| dc.description.abstract | Since radiation methods are widely used in microelectronics technology, title problem still stand to govern the radiation defects behavior in the irradiated semiconductor, especially in silicon crystals | ru |
| dc.language.iso | en | ru |
| dc.subject | science | ru |
| dc.subject | physics | ru |
| dc.subject | photons | ru |
| dc.subject | irradiation | ru |
| dc.subject | silicon | ru |
| dc.subject | crystals | ru |
| dc.subject | semiconductors | ru |
| dc.subject | radiation | ru |
| dc.title | Photon assisted particle irradiation of silicon | ru |
| dc.type | Article | ru |
| Располагается в коллекциях: | № 2 (5)
|
