| DC Field | Value | Language |
|---|
| dc.contributor.author | Laiho, R. | - |
| dc.contributor.author | Lashkul, A. V. | - |
| dc.contributor.author | Zakhvalinskii, V. S. | - |
| dc.date.accessioned | 2013-04-23T06:36:48Z | - |
| dc.date.available | 2013-04-23T06:36:48Z | - |
| dc.date.issued | 2008 | - |
| dc.identifier.citation | The Hall effect in Ni-doped p-CdSb in a strong magnetic field / R. Laiho, A.V. Lashkul, ... V.S Zakhvalinskii et al. // Semiconductor Science and Technology. - 2008. - Vol.23, N12.-Art. 125001. - doi:10.1088/0268-1242/23/12/125001. | ru |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/4450 | - |
| dc.description.abstract | The Hall effect in single crystals of the group II–V semiconductor p-CdSb doped with 2 at% of Ni is investigated between T = 1.5 and 300 K in pulsed magnetic fields up to B = 25 T. The Hall resistivity, ρH, exhibits a nonlinear dependence on B, which is strongly pronounced below ~10 K but is still observed even up to 300 K | ru |
| dc.language.iso | en | ru |
| dc.subject | physics | ru |
| dc.subject | solid state physics | ru |
| dc.subject | crystallography | ru |
| dc.subject | Hall effect | ru |
| dc.subject | magnetic field | ru |
| dc.subject | single crystals | ru |
| dc.title | The Hall effect in Ni-doped p-CdSb in a strong magnetic field | ru |
| dc.type | Article | ru |
| dc.identifier.citationpublication | Semiconductor Science and Technology | ru |
| dc.identifier.citationnumber | 12 | ru |
| dc.identifier.citationvolume | 23 | ru |
| dc.description.refereed | yes | ru |
| dc.description.institution | Belgorod State University | ru |
| Appears in Collections: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)
|
