| Поле DC | Значение | Язык |
|---|
| dc.contributor.author | Andreyeva, N. V. | - |
| dc.contributor.author | Virchenko, Yu. P. | - |
| dc.date.accessioned | 2012-04-19T10:07:22Z | - |
| dc.date.available | 2012-04-19T10:07:22Z | - |
| dc.date.issued | 2006 | - |
| dc.identifier.citation | Andreyeva, N.V. Statistics of mesoplasma channel formation upon thermal breakdown stabilization in thin semiconductor films / N.V. Andreeva, Yu.P. Virchenko ; BSU // Technical physics letters. - 2006. - Vol.32, №3.-P. 188-190. - doi: 10.1134/S1063785006030023. | ru |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/1947 | - |
| dc.description.abstract | A phenomenological model of the development of thermal breakdown in semiconductor films is considered, and it is shown that the average number of mesoplasma channels experimentally observed in the regime of thermal breakdown stabilization can substantially vary | ru |
| dc.language.iso | en | ru |
| dc.subject | science | ru |
| dc.subject | physics | ru |
| dc.subject | semiconductors | ru |
| dc.subject | thermal breakdown | ru |
| dc.subject | semiconductor films | ru |
| dc.subject | stabilization | ru |
| dc.subject | mesoplasma channels | ru |
| dc.title | Statistics of mesoplasma channel formation upon thermal breakdown stabilization in thin semiconductor films | ru |
| dc.type | Article | ru |
| dc.identifier.citationpublication | Technical physics letters | ru |
| dc.identifier.citationnumber | 3 | ru |
| dc.identifier.citationvolume | 32 | ru |
| dc.identifier.citationfirstpage | 188 | ru |
| dc.identifier.citationendpage | 190 | ru |
| dc.description.refereed | yes | ru |
| dc.description.institution | BSU | ru |
| Располагается в коллекциях: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)
|
