| Поле DC | Значение | Язык |
|---|
| dc.contributor.author | Syshchenko, V. V. | - |
| dc.contributor.author | Tarnovsky, A. I. | - |
| dc.contributor.author | ParakhinIsupov, A. S. | - |
| dc.contributor.author | Isupov, A. Yu. | - |
| dc.date.accessioned | 2024-05-30T07:04:15Z | - |
| dc.date.available | 2024-05-30T07:04:15Z | - |
| dc.date.issued | 2024 | - |
| dc.identifier.citation | Simulating quantum states of positively charged particles channeling along the [111] direction in a silicon crystal / V.V. Syshchenko, A.I. Tarnovsky, A.S. Parakhin, Isupov A.Yu. // Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. - 2024. - Vol.18, №2.-P. 274-280. | ru |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/62921 | - |
| dc.description.abstract | The potential well formed by the repulsive continuous potentials of three neighboring [111] chains in a silicon crystal, for a positively charged particle, exhibits the symmetry of an equilateral triangle, described by the group | ru |
| dc.language.iso | en | ru |
| dc.subject | physics | ru |
| dc.subject | solid state physics | ru |
| dc.subject | channeling | ru |
| dc.subject | silicon | ru |
| dc.subject | numerical simulation | ru |
| dc.subject | spectral method | ru |
| dc.subject | hexagonal grid | ru |
| dc.subject | quantum chaos | ru |
| dc.title | Simulating quantum states of positively charged particles channeling along the [111] direction in a silicon crystal | ru |
| dc.type | Article | ru |
| Располагается в коллекциях: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)
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