| DC Field | Value | Language |
|---|
| dc.contributor.author | Laiho, R. | - |
| dc.contributor.author | Lisunov, K. | - |
| dc.contributor.author | Zahvalinsky, V. | - |
| dc.date.accessioned | 2013-06-27T06:39:57Z | - |
| dc.date.available | 2013-06-27T06:39:57Z | - |
| dc.date.issued | 1995 | - |
| dc.identifier.citation | Laiho, R. Magnetoresistance of (Zn₁₋xMnx)₃As₂ in region of hopping conductivity / R. Laiho, K. Lisunov, ... V. Zahvalinsky // Journal of magnetism and magnetic materials. - 1995. - Vol.140-144, pt.3.-P. 2021-2022. - doi: 10.1016/0304-8853(94)00711-X | ru |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/5453 | - |
| dc.description.abstract | Magnetoresistance (MR) of (Zn1-xMnx)3As2 (0 ≤ x ≤ 0.13) is measured at 4 < T < 20 K. In applied fields < 1 T positive MR is observed for all compositions investigated. Above 1 T it is negative. The positive contribution is attributed to shift of the mobility threshold, and the negative one to suppression of the underbarrier spin-flip scattering of holes in the magnetic field | ru |
| dc.language.iso | en | ru |
| dc.subject | physics | ru |
| dc.subject | solid state physics | ru |
| dc.subject | magnetoresistance | ru |
| dc.subject | hopping conductivity | ru |
| dc.subject | semimagnetic semiconductors | ru |
| dc.subject | magnetic properties | ru |
| dc.title | Magnetoresistance of (Zn₁₋xMnx)₃As₂ in region of hopping conductivity | ru |
| dc.type | Article | ru |
| dc.identifier.citationpublication | Journal of magnetism and magnetic materials | ru |
| dc.identifier.citationnumber | 140-144 | ru |
| dc.identifier.citationvolume | 3 | ru |
| dc.identifier.citationfirstpage | 2021 | ru |
| dc.identifier.citationendpage | 2022 | ru |
| dc.description.refereed | yes | ru |
| dc.description.institution | Belgorod State University | ru |
| Appears in Collections: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)
|
