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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/48171
Title: Features in low-temperature electrical resistivity of amorphous Cd₃As₂ films due to hopping conductivity with changing activation energy
Authors: Piluyk, E. A.
Ivanov, O. N.
Zakhvalinskii, V. S.
Nikulicheva, T. B.
Keywords: physics
electricity
Cd₃As₂
amorphous films
negative magnetoresistance
activation energy
variable-range hopping conductivity
Issue Date: 2021
Citation: Features in low-temperature electrical resistivity of amorphous Cd₃As₂ films due to hopping conductivity with changing activation energy / E.A. Piluyk [et al.] // 2021. - Vol.573.-Art. 121134. - Doi: org/10.1016/j.jnoncrysol.2021.121134. - URL: https://www.sciencedirect.com/science/article/pii/S002230932100497X
Abstract: Amorphous Cd₃As₂ films were deposited on single-crystalline SrTiO3 substrate by high-frequency non-reactive magnetron sputtering. Electrical resistivity of the film, measured within 3-75 K range, increases at cooling. Below ~70 K, negative transverse magnetoresistance observed. Features in electrical resistivity and magnertoresistance can be attributed to variable-range hopping conductivity of the Mott type with local activation energy, which is temperature-dependent. Two temperature ranges in the hopping conductivity observed
URI: http://dspace.bsu.edu.ru/handle/123456789/48171
Appears in Collections:Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)

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