| Поле DC | Значение | Язык |
|---|
| dc.contributor.author | Laiho, R. | en |
| dc.contributor.author | Lashkul, A.V. | en |
| dc.contributor.author | Lisunov, K.G. | en |
| dc.contributor.author | Lahderanta, E. | en |
| dc.contributor.author | Shakhov, M.A. | en |
| dc.date.accessioned | 2013-04-18T13:26:13Z | - |
| dc.date.available | 2013-04-18T13:26:13Z | - |
| dc.date.issued | 2009 | - |
| dc.identifier.citation | Hall effect in the new diluted magnetic semiconductor p-CdSb:Ni / R. Laiho, A.V. Lashkul, K.G. Lisunov et al. ; Belgorod State University // Physica status solidi (c). - 2009. - Vol.6, N5.-P. 1328-1331. - doi: 10.1002/pssc.200881179 | ru |
| dc.identifier.other | doi: 10.1002/pssc.200881179 | - |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/4438 | - |
| dc.description.abstract | The anomalous contribution to the Hall effect is attributable to presence of magnetic Ni1–xSbx nanoclusters, which have been found previously from investigation of magnetic properties of p-CdSb:Ni | ru |
| dc.language.iso | en | ru |
| dc.subject | physics | ru |
| dc.subject | electricity | ru |
| dc.subject | hall effect | ru |
| dc.subject | semiconductor | ru |
| dc.subject | single crystals | ru |
| dc.subject | hall coefficient | ru |
| dc.title | Hall effect in the new diluted magnetic semiconductor p-CdSb:Ni | ru |
| dc.type | Article | ru |
| dc.identifier.citationpublication | Physica status solidi (c) | ru |
| dc.identifier.citationnumber | 6 | ru |
| dc.identifier.citationvolume | 5 | ru |
| dc.identifier.citationfirstpage | 1328 | ru |
| dc.identifier.citationendpage | 1331 | ru |
| dc.description.refereed | yes | ru |
| dc.description.institution | Belgorod State University | ru |
| Располагается в коллекциях: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)
|
