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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/4399
Title: Transient current in nematic cells containing a silicon substrate
Authors: Kucheev, S. I.
Keywords: physics
solid state physics
transient current
silicon substrate
Issue Date: 2008
Citation: Kucheev, S.I . Transient current in nematic cells containing a silicon substrate / S.I. Kucheev ; Belgorod State University // Journal of physics: condensed matter. - 2008. - Vol.20, N27.- P. 1-4. - Doi: 10.1088/0953-8984/20/27/275222
Abstract: Transient currents induced by step voltage or polarity reversal of voltage applied to a liquid crystal cell containing a silicon substrate have been investigated. It is shown that the curves of transient current reveal a minimum for negative polarity of dc voltage relative to a silicon substrate of p-type conductivity
URI: http://dspace.bsu.edu.ru/handle/123456789/4399
Appears in Collections:Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)

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