| Поле DC | Значение | Язык |
|---|
| dc.contributor.author | Shulga, N. F. | - |
| dc.contributor.author | Syshchenko, V. V. | - |
| dc.contributor.author | Tarnovsky, A. I. | - |
| dc.contributor.author | Solovyevc, I. I. | - |
| dc.contributor.author | Isupov, A. Yu. | - |
| dc.date.accessioned | 2020-06-09T21:10:40Z | - |
| dc.date.available | 2020-06-09T21:10:40Z | - |
| dc.date.issued | 2018 | - |
| dc.identifier.citation | Positrons vs electrons channeling in silicon crystal: energy levels, wave functions and quantum chaos manifestations / N. F. Shulga, V. V. Syshchenko, A. I. Tarnovsky [et al.] // Journal of Instrumentation. - 2018. - Vol.13, N1. - Art. C01017. - (XII International Symposium on Radiation from Relativistic Electrons in Periodic Structures - RREPS-17, Hamburg, Germany, 18-22 September, 2017). | ru |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/31746 | - |
| dc.description.abstract | The motion of fast electrons through the crystal during axial channeling could be regular and chaotic. The dynamical chaos in quantum systems manifests itself in both statistical properties of energy spectra and morphology of wave functions of the individual stationary states. In this report, we investigate the axial channeling of high and low energy electrons and positrons near direction of a silicon crystal | ru |
| dc.language.iso | en | ru |
| dc.subject | physics | ru |
| dc.subject | silicon crystal | ru |
| dc.subject | positrons | ru |
| dc.subject | electrons | ru |
| dc.subject | energy levels | ru |
| dc.subject | wave functions | ru |
| dc.subject | quantum chaos | ru |
| dc.title | Positrons vs electrons channeling in silicon crystal: energy levels, wave functions and quantum chaos manifestations | ru |
| dc.type | Article | ru |
| Располагается в коллекциях: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)
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